Analytical Model of Spin-Polarized Semiconductor Lasers

Abstract

We formulate an analytical model for vertical-cavity surface-emitting lasers (VCSELs) with injection (pump) of spin-polarized electrons. Our results for two different modes of carrier recombination allow for a systematic analysis of the operational regimes of the spin-VCSELs. We demonstrate that threshold reduction by electrically-pumped spin-polarized carriers can be larger than previously assumed possible. Near the threshold, such VCSELs can act as effective non-linear filters of circularly-polarized light, owing to their spin-dependent gain.

4 pages, 3 figures

References in corpus (1)

• Determination of Interface Atomic Structure and Its Impact on Spin Transport Using Z-Contrast Microscopy and Density-Functional Theory

Cited by in corpus (1)

• Optical orientation in bipolar spintronic devices