Spin relaxation in $n$-type ZnO quantum wells

Abstract

We perform an investigation on the spin relaxation for $n$-type ZnO (0001) quantum wells by numerically solving the kinetic spin Bloch equations with all the relevant scattering explicitly included. We show the temperature and electron density dependence of the spin relaxation time under various conditions such as impurity density, well width, and external electric field. We find a peak in the temperature dependence of the spin relaxation time at low impurity density. This peak can survive even at 100 K, much higher than the prediction and measurement value in GaAs. There also exhibits a peak in the electron density dependence at low temperature. These two peaks originate from the nonmonotonic temperature and electron density dependence of the Coulomb scattering. The spin relaxation time can reach the order of nanosecond at low temperature and high impurity density.

6 pages, 4 figures

References in corpus (6)

• Room temperature spin coherence in ZnO
• High temperature spin dephasing in n-typed GaAs quantum wells
• Spin orbit coupling in bulk ZnO and GaN
• Hot-electron effect in spin dephasing in $n$-type GaAs quantum wells
• Multi-subband effect in spin dephasing in semiconductor quantum wells
• Spin relaxation due to the Bir-Aronov-Pikus mechanism in intrinsic and $p$-type GaAs quantum wells from a fully microscopic approach