Electrical control of spin coherence in ZnO

Abstract

Electric field enhanced electron spin coherence is characterized using time-resolved Faraday rotation spectroscopy in n-type ZnO epilayers grown by molecular beam epitaxy. An in-plane dc electric field E almost doubles the transverse spin lifetime at 20 K, without affecting the effective g-factor. This effect persists till high temperatures, but decreases with increasing carrier concentration. Comparisons of the variations in the spin lifetime, the carrier recombination lifetime and photoluminescence lifetimes indicate that the applied E enhances the radiative recombination rate. All observed effects are independent of crystal directionality and are performed at low magnetic fields (B < 0.2 T).

13 pages, 3 figures

References in corpus (3)

• Current induced electron spin polarization in strained semiconductors
• Current-Induced Polarization and the Spin Hall Effect at Room Temperature
• Room temperature spin coherence in ZnO

Cited by in corpus (8)

• Spin dynamics in semiconductors
• Electron spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach
• Electric field-driven coherent spin reorientation of optically generated electron spin packets in InGaAs
• Spin noise spectroscopy of donor bound electrons in ZnO
• Unambiguous determination of spin dephasing times in ZnO
• Prediction of extremely long electron spin lifetimes at room temperature in wurtzite semiconductor quantum wells
• Spin relaxation in $n$-type ZnO quantum wells
• Spin-relaxation time in the impurity band of wurtzite semiconductors