Spin relaxation time, spin dephasing time and ensemble spin dephasing time in $n$-type GaAs quantum wells

Abstract

We investigate the spin relaxation and spin dephasing of $n$-type GaAs quantum wells. We obtain the spin relaxation time $T_1$, the spin dephasing time $T_2$ and the ensemble spin dephasing time $T_2^{\ast }$ by solving the full microscopic kinetic spin Bloch equations, and we show that, analogous to the common sense in an isotropic system for conduction electrons, $T_1$, $T_2$ and $T_2^{\ast }$ are identical due to the short correlation time. The inhomogeneous broadening induced by the D'yakonov-Perel term is suppressed by the scattering, especially the Coulomb scattering, in this system.

4 pages, 2 figures, to be published in Phys. Lett. A

References in corpus (8)

• High temperature spin dephasing in n-typed GaAs quantum wells
• Hot-electron effect in spin dephasing in $n$-type GaAs quantum wells
• Kinetic theory of spin transport in n-typed semiconductor quantum wells
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• Manipulation of spin dephasing in InAs quantum wires

Cited by in corpus (1)

• Spin relaxation due to the Bir-Aronov-Pikus mechanism in intrinsic and $p$-type GaAs quantum wells from a fully microscopic approach