Electric field dependence of spin coherence in (001) GaAs/AlGaAs quantum wells

Abstract

Conduction electron spin lifetimes ($T_1$) and spin coherence times ($T_2$) are strongly modified in semiconductor quantum wells by electric fields. Quantitative calculations in GaAs/AlGaAs quantum wells at room temperature show roughly a factor of four enhancement in the spin lifetimes at optimal values of the electric fields. The much smaller enhancement compared to previous calculations is due to overestimates of the zero-field spin lifetime and the importance of nonlinear effects.

5 pages, 3 figures

References in corpus (5)

• Non-ballistic spin field-effect transistor
• Current induced electron spin polarization in strained semiconductors
• High temperature gate control of quantum well spin memory
• Datta-Das transistor with enhanced spin control
• Anisotropic spin splitting and spin relaxation in asymmetric zinc-blende semiconductor quantum structures

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• Room temperature electron spin coherence in telecom-wavelength quaternary quantum wells
• Control of spin coherence in semiconductor double quantum dots
• Electron spin relaxation in $p$-type GaAs quantum wells
• Hanle Effect near Boundaries