Control of spin relaxation in semiconductor double quantum dots
arXiv:cond-mat/0601028 · doi:10.1103/PhysRevB.74.165312
Abstract
We propose a scheme to manipulate the spin relaxation in vertically coupled semiconductor double quantum dots. Up to {\em twelve} orders of magnitude variation of the spin relaxation time can be achieved by a small gate voltage applied vertically on the double dot. Different effects such as the dot size, barrier height, inter-dot distance, and magnetic field on the spin relaxation are investigated in detail. The condition to achieve a large variation is discussed.
5 pages, 4 figures, to be published in PRB
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Cited by in corpus (12)
- Spins in few-electron quantum dots
- Spin dynamics in semiconductors
- Simultaneous Spin-Charge Relaxation in Double Quantum Dots
- Wave function engineering in quantum dot-ring nanostructures
- Effect of electron-electron interaction on the phonon-mediated spin relaxation in quantum dots
- Reexamination of spin decoherence in semiconductor quantum dots from equation-of-motion approach
- Triplet-singlet relaxation in semiconductor single and double quantum dots
- Control of electron spin and orbital resonance in quantum dots through spin-orbit interactions
- Spin relaxation in an InAs quantum dot in the presence of terahertz driving fields
- Energy spectra of three electrons in Si/SiGe single and vertically coupled double quantum dots
- Electric manipulation of electron spin relaxation induced by confined phonons in nanowire-based double quantum dots
- Control of spin coherence in semiconductor double quantum dots