Control of spin coherence in semiconductor double quantum dots

Abstract

We propose a scheme to manipulate the spin coherence in vertically coupled GaAs double quantum dots. Up to {\em ten} orders of magnitude variation of the spin relaxation and {\em two} orders of magnitude variation of the spin dephasing can be achieved by a small gate voltage applied vertically on the double dot. Specially, large variation of spin relaxation still exists at 0 K. In the calculation, the equation-of-motion approach is applied to obtain the electron decoherence time and all the relevant spin decoherence mechanisms, such as the spin-orbit coupling together with the electron--bulk-phonon scattering, the direct spin-phonon coupling due to the phonon-induced strain, the hyperfine interaction and the second-order process of electron-phonon scattering combined with the hyperfine interaction, are included. The condition to obtain the large variations of spin coherence is also addressed.

6 pages, 4 figures, to be published in PRB

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Cited by in corpus (4)

• Spin dynamics in semiconductors
• Energy spectra of three electrons in Si/SiGe single and vertically coupled double quantum dots
• Single-particle and collective excitations in quantum wires made up of vertically stacked quantum dots: Zero magnetic field
• Spin-relaxation anisotropy in a nanowire quantum dot with strong spin-orbit coupling