Hole spin dynamics and hole factor anisotropy in coupled quantum well systems
arXiv:1408.2360 · doi:10.1103/PhysRevB.90.165439
Abstract
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex spin-dependent phenomena. One manifestation is the large anisotropy of Zeeman spin splitting. Using undoped, coupled quantum wells (QWs), we examine this anisotropy by comparing the hole spin dynamics for high- and low-symmetry crystallographic orientations of the QWs. We directly measure the hole factor via time-resolved Kerr rotation, and for the low-symmetry crystallographic orientations (110) and (113a), we observe a large in-plane anisotropy of the hole factor, in good agreement with our theoretical calculations. Using resonant spin amplification, we also observe an anisotropy of the hole spin dephasing in the (110)-grown structure, indicating that crystal symmetry may be used to control hole spin dynamics.
References in corpus (20)
- An Exact SU(2) Symmetry and Persistent Spin Helix in a Spin-Orbit Coupled System
- Emergence of the persistent spin helix in semiconductor quantum wells
- Spin decoherence of a heavy hole coupled to nuclear spins in a quantum dot
- Direct mapping of the formation of a persistent spin helix: Supplementary information
- Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects
- Hole - Nuclear Spin Interaction in Quantum Dots
- Universal behavior of the electron g-factor in GaAs/AlGaAs quantum wells
- Highly anisotropic g-factor of two-dimensional hole systems
- Spin coherence of holes in GaAs/AlGaAs quantum wells
- Full Electrical Control of the Electron Spin Relaxation in GaAs Quantum Wells
- Suppression of the D'yakonov-Perel' spin relaxation mechanism for all spin components in [111] zincblende quantum wells
- Engineering ultralong spin coherence in two-dimensional hole systems at low temperatures
- Electric field control of spin-orbit splittings in GaAs/AlGaAs coupled quantum wells
- Carbon doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 10^6 cm^2/Vs
- Anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells
- Decoherence-assisted initialization of a resident hole spin polarization in a two-dimensional hole gas
- Electron g-Factor Anisotropy in Symmetric (110)-oriented GaAs Quantum Wells
- Hole spin relaxation in -type (111) GaAs quantum wells
- Optical polarization of localized hole spins in p-doped quantum wells
- Spin dynamics in p-doped semiconductor nanostructures subject to a magnetic field tilted from the Voigt geometry
Cited by in corpus (10)
- Direct Rashba spin-orbit interaction in Si and Ge nanowires with different growth directions
- Large anisotropy of electron and hole g factors in infrared-emitting InAs/InAlGaAs self-assembled quantum dots
- Strong influence of spin-orbit coupling on magnetotransport in two-dimensional hole systems
- Electrical control of the Zeeman spin splitting in two-dimensional hole systems
- Dimensional reduction of the Luttinger Hamiltonian and g-factors of holes in symmetric two-dimensional semiconductor heterostructures
- Ultrafast pseudospin quantum beats in multilayer WSe and MoSe
- The in-plane anisotropy of the hole factor in CdTe/(Cd,Mg)Te quantum wells studied by spin-dependent photon echoes
- Asymmetric tensor in low-symmetry two-dimensional hole systems
- Spin dynamics and magneto-optical response in charge-neutral tunnel-coupled quantum dots
- Reliable modeling of weak antilocalization for accurate spin-lifetime extraction