Carbon doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 10^6 cm^2/Vs

Abstract

Utilizing a novel carbon doping source, we prepared two-dimensional hole gases in a symmetric quantum well structure in the GaAs/AlGaAs heterosystem. Low temperature hole mobilities up to 1.2 x 10^6 cm^2/Vs at a density of 2.3 x 10^11 cm^-2 were achieved on GaAs (001) substrates. In contrast to electron systems, the hole mobility sensitively depends on variations of the quantum well width and the spacer thickness. In particular an increase of the quantum well width from an optimal value of 15 nm to 18 nm is accompanied by a 35 % reduction of the hole mobility. The quality of ultrahigh-mobility electron systems is not affected by the employed carbon doping source.

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Cited by in corpus (12)

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• Record-quality GaAs two-dimensional hole systems
• Exploration of the Limits to Mobility in Two-Dimensional Hole Systems in GaAs/AlGaAs Quantum Wells
• Scattering Mechanisms in a High Mobility Low Density Carbon-Doped (100) GaAs Two-Dimensional Hole System
• Hole spin dynamics and hole $g$ factor anisotropy in coupled quantum well systems
• Static polarizability of two-dimensional hole gases
• Anomalous magnetoresistance peak in (110) GaAs two-dimensional holes: Evidence for Landau-level spin-index anticrossings
• Signatures of quantum mechanical Zeeman effect in classical transport due to topological properties of two-dimensional spin-3/2 holes
• Particle-hole Asymmetry of Fractional Quantum Hall States in the Second Landau Level of a Two-dimensional Hole System
• Composite Fermion States around 2D Hole Landau Level Filling Factor 3/2 in Tilted Magnetic Fields
• Hysteretic magnetotransport in p-type AlGaAs heterostructures with In/Zn/Au ohmic contacts