Polarized emission of GaN/AlN quantum dots : single dot spectroscopy and symmetry-based theory

Abstract

We report micro-photoluminescence studies of single GaN/AlN quantum dots grown along the (0001) crystal axis by molecular beam epitaxy on Si(111) substrates. The emission lines exhibit a linear polarization along the growth plane, but with varying magnitudes of the polarization degree and with principal polarization axes that do not necessarily correspond to crystallographic directions. Moreover, we could not observe any splitting of polarized emission lines, at least within the spectral resolution of our setup (1 meV). We propose a model based on the joint effects of electron-hole exchange interaction and in-plane anisotropy of strain and/or quantum dot shape, in order to explain the quantitative differences between our observations and those previously reported on, e.g. CdTe- or InAs-based quantum dots.

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Cited by in corpus (8)

• Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires
• Theory of excitons in cubic III-V semiconductor GaAs, InAs and GaN quantum dots: fine structure and spin relaxation
• GaN/AlN Quantum Dots for Single Qubit Emitters
• Blue-to-green single photons from InGaN/GaN dot-in-a-wire nanowire ordered arrays
• Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
• Control of single photon emitters in semiconductor nanowires by surface acoustic waves
• Surface acoustic wave modulation of single photon emission from GaN/InGaN nanowire quantum dots
• Experimental and theoretical analyses of strongly polarized photon emission from non-polar InGaN quantum dots