1.4k citations · 2.3k across the 18 of their papers we have counts for
18 papers
Band gap measurements of monolayer h-BN and insights into carbon-related point defects
Ricardo Javier Peña Román, Fábio J R Costa Costa, Alberto Zobelli +10
Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, build…
Single artificial atoms in silicon emitting at telecom wavelengths
W. Redjem, A. Durand, T. Herzig +15
Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificia…
Spontaneous emission of color centers at 4eV in hexagonal boron nitride under hydrostatic pressure
Kamil Koronski, Agata Kaminska, Nikolai D. Zhigadlo +3
The light emission properties of color centers emitting in 3.3-4 eV region are investigated for hydrostatic pressures ranging up to 5GPa at liquid helium temperature. The light emi…
Excitonic emission in van-der-Waals nanotubes of transition metal dichalcogenides
T. V. Shubina, M. Remškar, V. Yu. Davydov +3
Nanotubes (NTs) of transition metal dichalcogenides (TMDs), such as MoS2 and WS2, were first synthesized more than a quarter of a century ago; nevertheless, many of their propertie…
Multiwall nanotubes of molybdenum disulfide as optical resonators
D. R. Kazanov, A. V. Poshakinskiy, V. Yu. Davydov +8
We study the optical properties of MoS nanotubes (NTs) with walls comprising dozens of monolayers. We reveal strong peaks in micro-photoluminescence (-PL) spectra when detec…
Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure
Debora Pierucci, Jihene Zribi, Hugo Henck +11
We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or i…