Laser emission with excitonic gain in a ZnO planar microcavity
arXiv:1106.0183 · doi:10.1063/1.3593032
Abstract
The lasing operation of a ZnO planar microcavity under optical pumping is demonstrated from T=80 K to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240K. This shows that exciton scattering processes, typical of II-VI semiconductors, are involved in the gain process.
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Cited by in corpus (4)
- LO-phonon assisted polariton lasing in a ZnO based microcavity
- Polariton condensates at room temperature
- Patterned silicon substrates: a common platform for room temperature GaN and ZnO polariton lasers
- Strong coupling of exciton-polaritons in a bulk GaN planar waveguide: quantifiying the coupling strength