Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities

Abstract

Wide bandgap semiconductors are attractive candidates for polariton-based devices operating at room temperature. We present numerical simulations of reflectivity, transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compare the particularities of the strong coupling regime in each system. Indeed the intrinsic properties of the excitons in these materials result in a different hierarchy of energies between the valence-band splitting, the effective Rydberg and the Rabi energy, defining the characteristics of the exciton-polariton states independently of the quality factor of the cavity. The knowledge of the composition of the polariton eigenstates is central to optimize such systems. We demonstrate that, in ZnO bulk microcavities, only the lower polaritons are good eigenstates and all other resonances are damped, whereas upper polaritons can be properly defined in GaAs and GaN microcavities.

References in corpus (2)

• Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities
• Spontaneous Polarisation Build up in a Room Temperature Polariton Laser

Cited by in corpus (8)

• Strong light-matter coupling in two-dimensional atomic crystals
• Uncovering Temperature-Dependent Exciton-Polariton Relaxation Mechanisms in Perovskites
• Vertical cavity surface emitting laser action of an all monolithic ZnO-based microcavity
• Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature
• Laser emission with excitonic gain in a ZnO planar microcavity
• Photonic Crystal Architecture for Room Temperature Equilibrium Bose-Einstein Condensation of Exciton-Polaritons
• Mimicking graphene with polaritonic spin vortices
• High-temperature observation of intralayer, interlayer, and Rydberg excitons in bulk van der Waals alloy single crystals