Charge-Tunable Indium Gallium Nitride Quantum Dots

Abstract

III-Nitride quantum dots have emerged as a new chip-scale system for quantum information science, which combines electrical and optical interfaces on a semiconductor chip that is compatible with non-cryogenic operating temperatures. Yet most work has been limited to optical excitations. To enable single-spin based quantum optical and quantum information research, we demonstrate here quantized charging in optically active, site-controlled III-Nitride quantum dots. Single-electron charging was confirmed by the voltage dependence of the energy, dipole moment, fine structures and polarization properties of the exciton states in the quantum dots. The fundamental energy structures of the quantum dots were identified, including neutral and charged excitons, fine structures of excitons, and A and B excitons. The results lay the ground for coherent control of single charges in III-Nitride QDs, opening a door to III-Nitride based spintronics and spin-qubit quantum information processing.

7 figures

References in corpus (6)

• Driven coherent oscillations of a single electron spin in a quantum dot
• Coherent control of a single electron spin with electric fields
• Prospects for Spin-Based Quantum Computing
• Polarized emission of GaN/AlN quantum dots : single dot spectroscopy and symmetry-based theory
• Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots
• Polarized Emission Lines from Single InGaN/GaN Quantum Dots: Role of the Valence-band Structure of Wurtzite Group-III Nitrides

Cited by in corpus (1)

• Site-controlled InGaN/GaN single-photon-emitting diode