404 citations · 894 across the 8 of their papers we have counts for
8 papers
Origin of the Broad Lifetime Distribution of Localized Excitons in InGaN/GaN Quantum Dots
M. Winkelnkemper, M. Dworzak, T. P. Bartel +3
We derive an energy-dependent decay-time distribution function from the multi-exponential decay of the ensemble photoluminescence (PL) of InGaN/GaN quantum dots (QDs), which agrees…
GaN/AlN Quantum Dots for Single Qubit Emitters
M. Winkelnkemper, R. Seguin, S. Rodt +2
We study theoretically the electronic properties of -plane GaN/AlN quantum dots (QDs) with focus on their potential as sources of single polarized photons for future quantum com…
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
Patrick Rinke, Momme Winkelnkemper, Abdallah Qteish +3
We have derived consistent sets of band parameters (band gaps, crystal field-splittings, band gap deformation potentials, effective masses, Luttinger and EP parameters) for AlN, Ga…
Polarized Emission Lines from Single InGaN/GaN Quantum Dots: Role of the Valence-band Structure of Wurtzite Group-III Nitrides
M. Winkelnkemper, R. Seguin, S. Rodt +5
We present a study of the polarization properties of emission lines from single InGaN/GaN quantum dots (QDs). The QDs, formed by spinodal decomposition within ultra-thin InGaN quan…
Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots
M. Winkelnkemper, R. Seguin, S. Rodt +5
Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized al…
Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots
R. Seguin, A. Schliwa, T. D. Germann +8
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded t…