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6 papers · 1 filter
Intrinsic interface states in InAs-AlSb heterostructures
F. Raouafi, R. Benchamekh, M. O. Nestoklon +2
We examine the possibility of intrinsic interface states bound to the plane of In-Sb chemical bonds at InAs/AlSb interfaces. Careful parameterization of the bulk materials in the f…
Investigation of the anisotropic electron g factor as a probe of the electronic structure of GaBiAs/GaAs epilayers
Christopher A. Broderick, Simone Mazzucato, Hélène Carrère +9
The electron Landé g factor () is investigated both experimentally and theoretically in a series of GaBiAs/GaAs strained epitaxial layers, for bismuth composit…
Fine structure of neutral acceptor states of isolated impurity in zinc-blende semiconductors
M. O. Nestoklon, O. Krebs, R. Benchamekh +1
The properties of neutral acceptor states in zinc-blende semiconductors are re-examined in the frame of extended-basis tight-binding model. The symmetry discrepancy be…
Towards quantum dot arrays of entangled photon emitters
Gediminas Juska, Valeria Dimastrodonato, Lorenzo O. Mereni +2
We show that with a new family of pyramidal site-controlled InGaAsN quantum dots it is possible to obtain areas containing as much as 15% of polarization-entangled photon emitters…
Atomistic tight-binding study of electronic structure and interband optical transitions in GaBiAs/GaAs quantum wells
Muhammad Usman, Eoin P. O'Reilly
Large-supercell tight-binding calculations are presented for GaBiAs/GaAs single quantum wells (QWs) with Bi fractions of 3.125% and 12.5%. Our results highlight s…
Electronic and Optical Properties of [110]-Tilted InAs/GaAs Quantum Dot Stacks
Muhammad Usman
Multi-million atom simulations are performed to study stacking-angle () dependent strain profiles, electronic structure, and polarization-resolved optical modes from [110]-tilte…