activity
20012021
most citedSilicon nanowire band gap modification

217 citations · 787 across the 28 of their papers we have counts for

collaborators

28 papers

cond-mat.mtrl-sci2021★ 18 cited

Electronic properties of bismuth nanostructures

Christian König, James C. Greer, Stephen Fahy

The passivation of thin Bi(1 1 1) films with hydrogen and oxide capping layers is investigated from first principles. Considering termination-related changes of the crystal structu…

cond-mat.mtrl-sci2021★ 13 cited

Effect of strain and many-body corrections on the band inversions and topology of bismuth

Christian König, James C. Greer, Stephen Fahy

The electronic band structure of Bi is calculated using state of the art electronic structure methods, including density functional theory and GW quasiparticle approximatio…

cond-mat.mtrl-sci2020★ 7 cited

Impact of stoichiometry and strain on GeSn alloys from first principles calculations

Conor O'Donnell, Alfonso Sanchez-Soares, Christopher A. Broderick +1

We calculate the electronic structure of germanium-tin (GeSn) binary alloys for using density functional theory (DFT). Relaxed alloys with semicondu…

cond-mat.mtrl-sci2019

Epitaxial Stabilisation of Alloys

Alfonso Sanchez-Soares, Conor O'Donnell, James C. Greer

The thermodynamic stability of germanium tin alloys is investigated across the composition range by applying density functional theory (DFT)…

cond-mat.mtrl-sci2019★ 7 cited

Structural modification of thin Bi(1 1 1) films by passivation and native oxide model

Christian König, Stephen Fahy, James C. Greer

The structure of thin terminated Bi(1 1 1) films of approximately 1 nm thickness is investigated from first principles. Our density functional theory calculations show that covalen…

physics.app-ph2018★ 6 cited

Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires

Pedram Razavi, James C. Greer

The impact of uni-axial compressive and tensile strain and diameter on the electronic band structure of indium arsenide (InAs) nanowires (NWs) is investigated using first principle…