217 citations · 787 across the 28 of their papers we have counts for
4 papers · 1 filter
Simulations of gated Si nanowires and 3-nm junctionless transistors
Lida Ansari, Baruch Feldman, Giorgos Fagas +2
Inspired by recent experimental realizations and theoretical simulations of thin silicon nanowire-based devices, we perform predictive first-principles simulations of junctionless…
Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires
F. Murphy-Armando, G. Fagas, J. C. Greer
The role of reduced dimensionality and of the surface on electron-phonon (e-ph) coupling in silicon nanowires is determined from first principles. Surface termination and chemistry…
Ballistic Conductance in Oxidized Si Nanowires
Giorgos Fagas, James C. Greer
The influence of local oxidation in silicon nanowires on hole transport, and hence the effect of varying the oxidation state of silicon atoms at the wire surface, is studied using…
Silicon nanowire band gap modification
Michael Nolan, Sean O'Callaghan, Giorgos Fagas +2
Band gap modification for small-diameter (1 nm) silicon nanowires resulting from the use of different species for surface termination is investigated by density functional theory c…