Ballistic Conductance in Oxidized Si Nanowires

Abstract

The influence of local oxidation in silicon nanowires on hole transport, and hence the effect of varying the oxidation state of silicon atoms at the wire surface, is studied using density functional theory in conjunction with a Green's function scattering method. For silicon nanowires with growth direction along [110] and diameters of a few nanometers, it is found that the introduction of oxygen bridging and back bonds does not significantly degrade hole transport for voltages up to several hundred millivolts relative to the valence band edge. As a result, the mean free paths are comparable to or longer than the wire lengths envisioned for transistor and other nanoelectronics applications. Transport along [100]-oriented nanowires is less favorable, thus providing an advantage in terms of hole mobilities for [110] nanowire orientations, as preferentially produced in some growth methods.

References in corpus (6)

• Random-Matrix Theory of Quantum Transport
• Silicon nanowire band gap modification
• Resonance Lineshapes in Quasi-One-Dimensional Scattering
• A Theoretical Investigation of Surface Roughness Scattering in Silicon Nanowire Transistors
• Scaling theory put into practice: first-principles modeling of transport in doped silicon nanowires
• Conductance of a molecular junction mediated by unconventional metal-induced gap states

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