217 citations · 919 across the 24 of their papers we have counts for
24 papers
High fidelity TiN processing modes for multi-gate Ge-based quantum devices
Sinan Bugu, Sheshank Biradar, Alan Blake +5
Charge or spin-qubits can be realized by using gate-defined quantum dots (QDs) in semiconductors in a similar fashion to the processes used in CMOS for conventional field-effect tr…
First Principle-based Analysis of Single-Walled Carbon Nanotube and Silicon Nanowire Junctionless Transistors
Lida Ansari, Baruch Feldman, Giorgos Fagas +5
Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain…
Transport properties and electrical device characteristics with the TiMeS computational platform: application in silicon nanowires
Dimpy Sharma, Lida Ansari, Baruch Feldman +3
Nanoelectronics requires the development of a priori technology evaluation for materials and device design that takes into account quantum physical effects and the explicit chemica…
Simulations of gated Si nanowires and 3-nm junctionless transistors
Lida Ansari, Baruch Feldman, Giorgos Fagas +2
Inspired by recent experimental realizations and theoretical simulations of thin silicon nanowire-based devices, we perform predictive first-principles simulations of junctionless…
Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires
F. Murphy-Armando, G. Fagas, J. C. Greer
The role of reduced dimensionality and of the surface on electron-phonon (e-ph) coupling in silicon nanowires is determined from first principles. Surface termination and chemistry…
Ballistic Conductance in Oxidized Si Nanowires
Giorgos Fagas, James C. Greer
The influence of local oxidation in silicon nanowires on hole transport, and hence the effect of varying the oxidation state of silicon atoms at the wire surface, is studied using…