Anomalous Suppression of Valley Splittings in Lead Salt Nanocrystals without Inversion Center

Abstract

Atomistic sp3d5s* tight-binding theory of PbSe and PbS nanocrystals is developed. It is demonstrated, that the valley splittings of confined electrons and holes strongly and peculiarly depend on the geometry of a nanocrystal. When the nanocrystal lacks a microscopic center of inversion and has T_d symmetry, the splitting is strongly suppressed as compared to the more symmetric nanocrystals with O_h symmetry, having an inversion center.

5 pages, 4 figures, 1 table

References in corpus (5)

• Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells
• Spin and valley-orbit splittings in SiGe/Si heterostructures
• Interband, intraband and excited-state direct photon absorption of silicon and germanium nanocrystals embedded in a wide band-gap lattice
• Near Kohn anomalies in the phonon dispersion relations of lead chalcogenides
• Atomistic study of electronic structure of PbSe nanowires

Cited by in corpus (12)

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• Direct bandgap silicon quantum dots achieved via electronegative capping
• Quasi-flat band enables subradiant two-photon bound states
• Tight-binding description of inorganic lead halide perovskites in cubic phase
• Valley and spin splittings in PbSe nanowires
• Optical transitions, exciton radiative decay, and valley coherence in lead chalcogenide quantum dots
• Shape effect on the valley splitting in lead selenide nanowires
• Effective Landé factors of electrons and holes in lead chalcogenide nanocrystals
• Tight-binding calculations of SiGe alloy nanocrystals in SiO2 matrix
• Theory for electron and hole fine structure and Landé g-factors in lead chalcogenide nanowires
• Fine structure of neutral acceptor states of isolated impurity in zinc-blende semiconductors
• Untangling the valley structure of states for intravalley exchange anisotropy in lead chalcogenides quantum dots