Effective Landé factors of electrons and holes in lead chalcogenide nanocrystals

Abstract

The Landé or g-factors of charge carriers in solid state systems provide invaluable information about response of quantum states to external magnetic fields and are key ingredients in description of spin-dependent phenomena in nanostructures. We report on the comprehensive theoretical analysis of electron and hole g-factors in lead chalcogenide nanocrystals. By combining symmetry analysis, atomistic calculations, and extended k.p theory, we relate calculated linear-in-magnetic field energy splittings of confined electron states in nanocrystals to the intravalley g-factors of the multi-valley bulk materials, renormalized due to the quantum confinement. We demonstrate that this renormalization is correctly reproduced by analytical expressions derived in the framework of the extended k.p model.

References in corpus (6)

• The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap
• Revealing the Exciton Fine Structure in PbSe Nanocrystal Quantum Dots
• Origin of Two Larmor Frequencies in the Coherent Spin Dynamics of Colloidal CdSe Quantum Dots Revealed by Controlled Charging
• Optical transitions, exciton radiative decay, and valley coherence in lead chalcogenide quantum dots
• Shape effect on the valley splitting in lead selenide nanowires
• Exciton interaction with acoustic phonons in PbS nanocrystals

Cited by in corpus (3)

• Tailoring the electron and hole Landé factors in lead halide perovskite nanocrystals by quantum confinement and halide exchange
• Theory for electron and hole fine structure and Landé g-factors in lead chalcogenide nanowires
• Untangling the valley structure of states for intravalley exchange anisotropy in lead chalcogenides quantum dots