The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap

Abstract

The Landé or $g$-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI${}_3$, MAPb(Br${}_{0.5}$Cl${}_{0.5}$)${}_3$, MAPb(Br${}_{0.05}$Cl${}_{0.95}$)${}_3$, FAPbBr${}_3$, FA${}_{0.9}$Cs${}_{0.1}$PbI${}_{2.8}$Br${}_{0.2}$) and all-inorganic (CsPbBr${}_3$) lead halide perovskites, determined by pump-probe Kerr rotation and spin-flip Raman scattering in magnetic fields up to 10~T at cryogenic temperatures. Further, we use first-principles DFT calculations in combination with tight-binding and $\mathbf{k}\cdot \mathbf{p}$ approaches to calculate microscopically the Landé factors. The results demonstrate their universal dependence on the band gap energy across the different perovskite material classes, which can be summarized in a universal semi-phenomenological expression, in good agreement with experiment.

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Cited by in corpus (8)

• Mode locking of hole spin coherences in CsPb(Cl,Br)${}_3$ perovskite nanocrystals
• Tailoring the electron and hole Landé factors in lead halide perovskite nanocrystals by quantum confinement and halide exchange
• Giant optical orientation of exciton spins in lead halide perovskite crystals
• Coherent Spin Dynamics of Electrons in Two-Dimensional (PEA)${}_2$PbI${}_4$ Perovskites
• Spin Coherence and Spin Relaxation in Hybrid Organic-Inorganic Lead and Mixed Lead-Tin Perovskites
• Theory of resonant Raman scattering due to spin-flips of resident charge carries and excitons in perovskite semiconductors
• Effective Landé factors of electrons and holes in lead chalcogenide nanocrystals
• Material gain and eight-band k.p description for selected perovskites