Theory of resonant Raman scattering due to spin-flips of resident charge carries and excitons in perovskite semiconductors
arXiv:2210.11202 · doi:10.1103/PhysRevB.106.245202
Abstract
We have developed a theory of Raman scattering with single and double spin flips of localized resident electrons and holes as well as nonequilibrium localized excitons in semiconductor perovskite crystals under optical excitation in the resonant exciton region. Scattering mechanisms involving localized excitons, biexcitons and exciton polaritons as intermediate states has been examined, the spin-flip Raman scattering by polaritons being a novel mechanism. The derived equations are presented in the invariant form allowing one for the analysis of the dependence of scattering efficiency on the polarization of the initial and scattered light and on the orientation of the external magnetic field.
arXiv comment15 pages, 2 figures, 2 tables
References in corpus (5)
- Bright triplet excitons in lead halide perovskites
- The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap
- Optical orientation and alignment of excitons in ensembles of inorganic perovskite nanocrystals
- Single and double electron spin-flip Raman scattering in CdSe colloidal nanoplatelets
- Theory of single and double electron spin-flip Raman scattering in semiconductor nanoplatelets