Shape effect on the valley splitting in lead selenide nanowires

Abstract

We study the cross-section shape and size effects on the valley splitting in PbSe nanowires within the framework of empirical $s{p}^3{d}^5{s}^{\ast }$ tight-binding method. We consider ideallized prismatic nanowires, grown along [110], with the cross-section shape varying from rectangular (terminated by $\{001\}$ and $\{110\}$ facets) to rhombic (terminated mostly by $\{111\}$ facets). The valley splitting energies have the maximal value (up to hundreds meV) in rectangular nanowires, while in rhombic ones they are almost absent. The shape dependence is shown to be similar for a wide range cross-section sizes and different point symmetries of nanowires.

7 pages, 6 figures, 1 table

References in corpus (3)

• Spin and valley-orbit splittings in SiGe/Si heterostructures
• Direct bandgap silicon quantum dots achieved via electronegative capping
• Valley and spin splittings in PbSe nanowires

Cited by in corpus (4)

• Origin of quantum shape effect
• Effective Landé factors of electrons and holes in lead chalcogenide nanocrystals
• Theory for electron and hole fine structure and Landé g-factors in lead chalcogenide nanowires
• Untangling the valley structure of states for intravalley exchange anisotropy in lead chalcogenides quantum dots