Atomistic study of electronic structure of PbSe nanowires

Abstract

Lead Selenide (PbSe) is an attractive `IV-VI' semiconductor material to design optical sensors, lasers and thermoelectric devices. Improved fabrication of PbSe nanowires (NWs) enables the utilization of low dimensional quantum effects. The effect of cross-section size (W) and channel orientation on the bandstructure of PbSe NWs is studied using an 18 band $s{p}^3{d}^5$ tight-binding theory. The bandgap increases almost with the inverse of the W for all the orientations indicating a weak symmetry dependence. [111] and [110] NWs show higher ballistic conductance for the conduction and valence band compared to [100] NWs due to the significant splitting of the projected L-valleys in [100] NWs.

4 figures, Prepared for APL

References in corpus (1)

• Electronic states and optical properties of PbSe nanorods and nanowires

Cited by in corpus (4)

• Anomalous Suppression of Valley Splittings in Lead Salt Nanocrystals without Inversion Center
• Valley and spin splittings in PbSe nanowires
• Shape effect on the valley splitting in lead selenide nanowires
• Theory for electron and hole fine structure and Landé g-factors in lead chalcogenide nanowires