AMR and magnetometry studies of ultra thin GaMnAs films
arXiv:cond-mat/0610692 · doi:10.1002/pssc.200672836
Abstract
We have measured the Anisotropic Magnetoresistance (AMR) of ultra thin (5nm) Ga(0.95)Mn(0.05)As films. We find that the sign of the AMR can be positive or negative, which may depend on the direction of the current with respect to the crystal. At low temperatures, transport measurements and SQUID magnetometry suggest that the magnetisation has a component pointing out of the plane of the film.
Accepted for publication in Physica Status Solidi C
References in corpus (7)
- Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices
- In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films
- Temperature Dependent Magnetic Anisotropy in (Ga,Ma)As Layers
- Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers
- DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors
- Anisotropic Magnetoresistance and Magnetic Anisotropy in High-quality (Ga,Mn)As Films
- Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain