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20032008
most citedLarge tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

92 citations · 211 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.str-el2008★ 2 cited

Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

A. D. Giddings, O. N. Makarovsky, M. N. Khalid +8

We report large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistable telegraphic switching. The…

cond-mat.mtrl-sci2008★ 21 cited

(Ga,Mn)As based superlattices and the search for antiferromagnetic interlayer coupling

A. D. Giddings, T. Jungwirth, B. L. Gallagher

Antiferromagnetic interlayer coupling in dilute magnetic semiconductor superlattices could result in the realisation of large magnetoresistance effects analogous to the giant magne…

cond-mat.mtrl-sci2006★ 7 cited

Interlayer exchange coupling in (Ga,Mn)As based multilayers

A. D. Giddings, T. Jungwirth, B. L. Gallagher

Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresis…

cond-mat.mes-hall2006★ 15 cited

AMR and magnetometry studies of ultra thin GaMnAs films

A. W. Rushforth, A. D. Giddings, K. W. Edmonds +3

We have measured the Anisotropic Magnetoresistance (AMR) of ultra thin (5nm) Ga(0.95)Mn(0.05)As films. We find that the sign of the AMR can be positive or negative, which may depen…

cond-mat.str-el2006

Coulomb blockade anisotropic magnetoresistance: Singleelectronics meets spintronics

J. Wunderlich, T. Jungwirth, B. Kaestner +10

Single-electronics and spintronics are among the most intensively investigated potential complements or alternatives to CMOS electronics. Single-electronics, which is based on the…

cond-mat.mtrl-sci2004★ 35 cited

Transport and Magnetism in p-type cubic (Ga,Mn)N

KW Edmonds, SV Novikov, M Sawicki +8

The electrical and magnetic properties of p-type cubic (Ga,Mn)N thin films grown by plasma-assisted molecular beam epitaxy are reported. Hole concentrations in excess of 1018 cm-3…