Nanoengineered Curie Temperature in Laterally-Patterned Ferromagnetic Semiconductor Heterostructures
arXiv:cond-mat/0501298 · doi:10.1063/1.1900938
Abstract
We demonstrate the manipulation of the Curie temperature of buried layers of the ferromagnetic semiconductor (Ga,Mn)As using nanolithography to enhance the effect of annealing. Patterning the GaAs-capped ferromagnetic layers into nanowires exposes free surfaces at the sidewalls of the patterned (Ga,Mn)As layers and thus allows the removal of Mn interstitials using annealing. This leads to an enhanced Curie temperature and reduced resistivity compared to unpatterned samples. For a fixed annealing time, the enhancement of the Curie temperature is larger for narrower nanowires.
Submitted to Applied Physics Letters (minor corrections)
References in corpus (6)
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Cited by in corpus (6)
- Theory of ferromagnetic (III,Mn)V semiconductors
- Dilute ferromagnetic semiconductors: Physics and spintronic structures
- Cavity-Enhanced Linear Dichroism in a van der Waals Antiferromagnet
- Intrinsic oscillations of spin current polarization in a paramagnetic resonant tunneling diode
- Spin filter effect at room temperature in GaN/GaMnN ferromagnetic resonant tunneling diode
- Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature