Distribution of magnetic domain pinning fields in GaMnAs ferromagnetic films
arXiv:0803.0714 · doi:10.1103/PhysRevB.78.075309
Abstract
Using the angular dependence of the planar Hall effect in GaMnAs ferromagnetic films, we were able to determine the distribution of magnetic domain pinning fields in this material. Interestingly, there is a major difference between the pinning field distribution in as-grown and in annealed films, the former showing a strikingly narrower distribution than the latter. This conspicuous difference can be attributed to the degree of non-uniformity of magnetic anisotropy in both types of films. This finding provides a better understanding of the magnetic domain landscape in GaMnAs that has been the subject of intense debate.
References in corpus (7)
- Mn Interstitial Diffusion in (Ga,Mn)As
- Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices
- Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs
- High Curie temperature GaMnAs obtained by resistance-monitored annealing
- Reorientation Transition in Single-Domain (Ga,Mn)As
- Mixed magnetic phases in (Ga,Mn)As epilayers
- Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films