Annealing-induced changes of the magnetic anisotropy of (Ga,Mn)As epilayers
arXiv:cond-mat/0505278 · doi:10.1063/1.2123380
Abstract
The dependence of the magnetic anisotropy of As-capped (Ga,Mn)As epilayers on the annealing parameters - temperature and time - has been investigated. A uniaxial magnetic anisotropy is evidenced, whose orientation with respect to the crystallographic axes changes upon annealing from [-110] for the as-grown samples to [110] for the annealed samples. Both cubic an uniaxial anisotropies are tightly linked to the concentration of charge carriers, the magnitude of which is controlled by the annealing process.
arXiv comment3 pages, 3 figures
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Cited by in corpus (4)
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- Evolution of the magnetic anisotropy with carrier density in hydrogenated (Ga,Mn)As
- Ion-beam modification of the magnetic properties of GaMnAs epilayers