Dynamic relaxation of magnetic clusters in a ferromagnetic (Ga,Mn)As epilayer
arXiv:cond-mat/0511392 · doi:10.1103/PhysRevB.73.155204
Abstract
A new scenario of the mechanism of intriguing ferromagnetic properties in Mn-doped magnetic semiconductor (Ga,Mn)As is examined in detail. We find that magnetic features seen in zero-field cooled and field cooled magnetizations are not interpreted with a single domain model [Phys. Rev. Lett. 95, 217204 (2005)], and the magnetic relaxation, which is similar to that seen in magnetic particles and granular systems, is becoming significant at temperatures above the lower-temperature peak in the temperature dependence of ac susceptibility, supporting the cluster/matrix model reported in our previous work [Phys. Rev. Lett. 94, 147203 (2005)]. Cole-Cole analysis reveals that magnetic interactions between such (Ga,Mn)As clusters are significant at temperatures below the higher-temperature peak in the temperature dependent ac susceptibility. The magnetizations of these films disappear above the temperature showing the higher-temperature peak, which is generally referred to as the Curie temperature. However, we suggest that these combined results are evidence that the temperature is actually the blocking temperature of (Ga,Mn)As clusters with a relatively high hole concentration compared to the (Ga,Mn)As matrix.
arXiv comment8 pages, 7 figures, to appear in Phys. Rev. B
References in corpus (7)
- Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
- Mn Interstitial Diffusion in (Ga,Mn)As
- In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films
- Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers
- Temperature Dependent Magnetic Anisotropy in (Ga,Ma)As Layers
- Reorientation Transition in Single-Domain (Ga,Mn)As
- Mixed magnetic phases in (Ga,Mn)As epilayers
Cited by in corpus (4)
- Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching
- Magnetic anisotropy switching in (Ga,Mn)As with increasing hole concentration
- Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature
- Out-of-plane magnetization reversal processes of (Ga,Mn)As with two different hole concentrations