Out-of-plane magnetization reversal processes of (Ga,Mn)As with two different hole concentrations

Abstract

We study magnetization reversal processes of in-plane magnetized (Ga,Mn)As epilayers with different hole concentrations in out-of-plane magnetic fields using magnetotransport measurements. A clear difference in the magnetization process is found in two separate samples with hole concentrations of 10^20 cm^-3 and 10^21 cm^-3 as the magnetization rotates from the out-of-plane saturation to the in-plane remanence. Magnetization switching process from the in-plane remanence to the out-of-plane direction, on the other hand, shows no hole concentration dependence, where the switching process occurs via domain wall propagation. We show that the balance of <100> cubic magnetocrystalline anisotropy and uniaxial [110] anisotropy gives an understanding of the difference in the out-of-plane magnetization processes of (Ga,Mn)As epilayers.

6 pages, 4 figures, to appear in J. Appl. Phys

References in corpus (10)

• Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices
• In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films
• Ferromagnetism in Mn doped GaAs due to substitutional-interstitial complexes
• Anisotropic Magnetoresistance in Ga${}_{1-x}$Mn${}_x$As
• Electronic and magnetic properties of substitutional Mn clusters in (Ga,Mn)As
• Relation among concentrations of incorporated Mn atoms, ionized Mn acceptors, and holes in p-(Ga,Mn)As epilayers
• Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain
• Cross-sectional STM of Mn-doped GaAs: theory and experiment
• Mixed magnetic phases in (Ga,Mn)As epilayers
• Dynamic relaxation of magnetic clusters in a ferromagnetic (Ga,Mn)As epilayer