Magnetism in (III, Mn)-V Diluted Magnetic Semiconductors: Effective Heisenberg Model

Abstract

The magnetic properties of the diluted magnetic semiconductors (DMS) (Ga, Mn)As and (Ga, Mn)N are investigated by means of an effective Heisenberg model, whose exchange parameters are obtained from first-principle calculations. The finite-temperature properties of the model are studied numerically using a method based upon the Tyablikov approximation. The method properly incorporates the effects of positional disorder present in DMS. The resulting Curie temperatures for (Ga, Mn)As are in excellent agreement with experimental data. Due to percolation effects and noncollinear magnetic structures at higher Mn concentrations, our calculations predict for (Ga, Mn)N very low Curie temperatures compared to mean-field estimates.

arXiv comment5 pages, 7 figures, sbumitted to PRB

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Cited by in corpus (9)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors
• Exchange interactions and temperature dependence of the magnetization in half--metallic Heusler alloys
• Carrier induced ferromagnetism in diluted local-moment systems
• Magnetic interactions of substitutional Mn pairs in GaAs
• Spin dynamics in the diluted ferromagnetic Kondo lattice model
• Clustering induced suppression of ferromagnetism in diluted magnets
• Effective Heisenberg exchange integrals of diluted magnetic semiconductors determined within realistic multi-band tight-binding models
• Coherence and stiffness of spin waves in diluted ferromagnets