Magneto-optical properties of a new group-IV ferromagnetic semiconductor Ge1-xFex grown by low-temperature molecular beam epitaxy
arXiv:cond-mat/0511328 · doi:10.1063/1.2172909
Abstract
A new group-IV ferromagnetic semiconductor, Ge1-xFex, was successfully grown by low-temperature molecular beam epitaxy (LT-MBE) without precipitation of ferromagnetic Ge-Fe intermetallic compounds. The ferromagnetism of Ge1-xFex films was investigated by magnetic circular dichroism (MCD). In particular, the influence of the Fe content (FFe/FGe =1 - 10%) and growth temperature (100, 200OC) on the ferromagnetism was carefully studied. The MCD measurements revealed that the band structure of the Ge1-xFex films was identical with that of bulk Ge, and that the large spin splitting of the band structure was induced by the incorporation of Fe atoms into the Ge matrix, indicating the existence of s,p-d exchange interactions. The Ge1-xFex films showed ferromagnetic behavior and the ferromagnetic transition temperature linearly increased with increasing the Fe composition. These results indicate that the epitaxially grown Ge1-xFex is an intrinsic ferromagnetic semiconductor.
arXiv comment15 pages, 4 figures. to appear in J. Appl. Phys
References in corpus (5)
- A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain
- Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors
- Magnetic and electronic transport percolation in epitaxial GeMn films
- Precipitation of amorphous ferromagnetic semiconductor phase in epitaxially grown Mn-doped Ge thin films
- Epitaxial Growth of the Diluted Magnetic Semiconductors CryGe1-y and CryMnxGe1-x-y
Cited by in corpus (5)
- Spinodal nanodecomposition in magnetically doped semiconductors
- Annealing-induced enhancement of ferromagnetism and nano-particle formation in ferromagnetic-semiconductor GeFe
- Properties of group-IV-based ferromagnetic semiconductor GeFe: Growth temperature dependence, lattice constant, location of Fe atoms, and their relevance to the magnetic properties
- Electronic Structure of the Ferromagnetic Semiconductor Fe-doped Ge Revealed by Soft X-ray Angle-Resolved Photoemission Spectroscopy
- Impurity band conduction in group-IV ferromagnetic semiconductor Ge1-xFex with nanoscale fluctuations in Fe concentration