Epitaxial Growth of the Diluted Magnetic Semiconductors CryGe1-y and CryMnxGe1-x-y

Abstract

We report the epitaxial growth of CryGe1-y and CryMnxGe1-x-y(001) thin films on GaAs(001), describe the structural and transport properties, and compare the measured magnetic properties with those predicted by theory. The samples are strongly p-type, and hole densities increase with Cr concentration. The CryGe1-y system remains paramagnetic for the growth conditions and low Cr concentrations employed (y < 0.04), consistent with density functional theory predictions. Addition of Cr into the ferromagnetic semiconductor MnxGe1-x host systematically reduces the Curie temperature and total magnetization.

arXiv comment4 pages, 4 figures, submitted to Applied Physics Letters

References in corpus (1)

• Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors

Cited by in corpus (4)

• Spinodal nanodecomposition in magnetically doped semiconductors
• First principles investigation of transition-metal doped group-IV semiconductors: R${}_x$Y${}_{1-x}$ (R=Cr, Mn, Fe; Y=Si, Ge)
• Magneto-optical properties of a new group-IV ferromagnetic semiconductor Ge1-xFex grown by low-temperature molecular beam epitaxy
• Distribution of doped Mn at the Σ3 (112) grain boundary in Ge