13 citations · 28 across the 5 of their papers we have counts for
5 papers
Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing Ballistic Electron Emission Microscopy
Chris A. Durcan, Robert Balsano, Vincent P. LaBella
The W/Si(001) Schottky barrier height is mapped to nanoscale dimensions using BEEM over a period of 21 days to observe changes in the interface electrostatics. Initially the averag…
Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001)
Z. Ding, P. M. Thibado, C. Awo-Affouda +1
We have deposited Co films on the GaAs(001) surface by using an e-beam evaporation method. The thicknesses of the Co films are measured by using x-ray reflectivity and Rutherford b…
Atmospheric oxygen in Mn doped GaAs/GaAs(0 0 1) thin films grown by molecular beam epitaxy
J. F. Xu, P. M. Thibado, C. Awo-Affouda +2
Mn doped GaAs thin films were grown using molecular beam epitaxy at high and low substrate temperatures. The elemental concentration depth profiles in the thin films were determine…
Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy
J. F. Xu, P. M. Thibado, C. Awo-Affouda +2
Mn concentration depth profiles in Mn-doped GaAs thin films grown at substrate temperatures of 580 and 250 °C using various Mn cell temperatures have been investigated with dynamic…
Schottky barrier and attenuation length for hot hole injection in non-epitaxial Au on p-type GaAs
I. Sitnitsky, J. J. Garramone, J. R. Abel +6
Ballistic electron emission microscopy (BEEM) was performed to obtain nanoscale current versus bias characteristics of non-epitaxial Au on p-type GaAs in order to accurately measur…