13 citations · 30 across the 4 of their papers we have counts for
4 papers
Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001)
Z. Ding, P. M. Thibado, C. Awo-Affouda +1
We have deposited Co films on the GaAs(001) surface by using an e-beam evaporation method. The thicknesses of the Co films are measured by using x-ray reflectivity and Rutherford b…
Atmospheric oxygen in Mn doped GaAs/GaAs(0 0 1) thin films grown by molecular beam epitaxy
J. F. Xu, P. M. Thibado, C. Awo-Affouda +2
Mn doped GaAs thin films were grown using molecular beam epitaxy at high and low substrate temperatures. The elemental concentration depth profiles in the thin films were determine…
Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy
J. F. Xu, P. M. Thibado, C. Awo-Affouda +2
Mn concentration depth profiles in Mn-doped GaAs thin films grown at substrate temperatures of 580 and 250 °C using various Mn cell temperatures have been investigated with dynamic…
Information Processing with Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation and Detection
Olaf M. J. van "t Erve, Chaffra Awo-Affouda, Aubrey T. Hanbicki +3
We demonstrate that information can be transmitted and processed with pure spin currents in silicon. Fe/Al2O3 tunnel barrier contacts are used to produce significant electron spin…