9 citations · 19 across the 4 of their papers we have counts for
7 papers
Comparative study of magnetic properties of Mn magnetic clusters in GaN using classical and quantum mechanical approach
Yadhu Krishnan Edathumkandy, Dariusz Sztenkiel
Currently, simulations of many-body quantum systems are known to be computationally too demanding to be solved on classical computers. The main problem is that the computation time…
Crystal field model simulations of magnetic response of pairs, triplets and quartets of Mn ions in GaN
D. Sztenkiel, K. Gas, J. Z. Domagala +2
A ferromagnetic coupling between localized Mn spins was predicted in a series of \textit{ab initio} and tight binding calculations and experimentally verified for the dilute magnet…
Heavy-hole band splitting observed in mobility spectrum of p-type InAs grown on GaAs substrate
Jaroslaw Wrobel, Gilberto Umana-Membreno, Jacek Boguski +6
High quality berylium doped InAs layer grown by MBE on GaAs substrate has been examined via magnetotransport measurements and high resolution quantitative mobility spectrum analysi…
Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire
Karolina Kalbarczyk, Krzysztof Dybko, Katarzyna Gas +7
Schottky barrier height and the ideality factor are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroep…
Impact of substrate temperature on magnetic properties of plasma-assisted molecular beam epitaxy grown (Ga,Mn)N
Katarzyna Gas, Jaroslaw Z. Domagala, Rafal Jakiela +12
A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth tempe…
Properties and characterization of ALD grown dielectric oxides for MIS structures
S. Gieraltowska, D. Sztenkiel, E. Guziewicz +7
We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate t…