86 citations · 393 across the 19 of their papers we have counts for
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cond-mat.mtrl-sci2019
Heavy-hole band splitting observed in mobility spectrum of p-type InAs grown on GaAs substrate
Jaroslaw Wrobel, Gilberto Umana-Membreno, Jacek Boguski +6
High quality berylium doped InAs layer grown by MBE on GaAs substrate has been examined via magnetotransport measurements and high resolution quantitative mobility spectrum analysi…
physics.app-ph2019★ 9 cited
Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire
Karolina Kalbarczyk, Krzysztof Dybko, Katarzyna Gas +7
Schottky barrier height and the ideality factor are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroep…