Crystal field model simulations of magnetic response of pairs, triplets and quartets of Mn ions in GaN
arXiv:2006.12945 · doi:10.1088/1367-2630/abcce7
Abstract
A ferromagnetic coupling between localized Mn spins was predicted in a series of \textit{ab initio} and tight binding calculations and experimentally verified for the dilute magnetic semiconductor GaMnN. In the limit of small Mn concentrations, , the paramagnetic properties of this material were successfully described using a single ion crystal field model approach. In order to obtain the description of magnetization in (Ga,Mn)N in the presence of interacting magnetic centers, we extend the previous model of a single substitutional Mn ion in GaN by considering pairs, triplets and quartets of Mn ions coupled by a ferromagnetic superexchange interaction. Using this approach we investigate how the magnetic properties, particularly the magnitude of the uniaxial anisotropy field, change as the number of magnetic Mn ions in a given cluster increases from 1 to 4. Our simulations are then exploited in explaining experimental magnetic properties of GaMnN with , where the presence of small magnetic clusters gains in significance. As a result the approximate lower and upper limits for the values of exchange couplings between Mn ions in GaN, being in nearest neighbors and next nearest neighbors positions, respectively, are established.
arXiv comment14 pages, 6 figures
References in corpus (18)
- Atomistic spin model simulations of magnetic nanomaterials
- Molecular engineering of antiferromagnetic rings for quantum computation
- Quantitative simulation of temperature dependent magnetization dynamics and equilibrium properties of elemental ferromagnets
- Sensitive SQUID magnetometry for studying nano-magnetism
- Structural and paramagnetic properties of dilute Ga1-xMnxN
- Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N
- Aggregation and magnetism of Cr, Mn, and Fe cations in GaN
- Phase diagram and critical behavior of the random ferromagnet
- Origin of low-temperature magnetic ordering in Ga1-xMnxN
- Homogenous and heterogeneous magnetism in (Zn,Co)O
- GaMnN epitaxial films with high magnetization
- Stretching magnetism with an electric field in a nitride semiconductor
- Magnetic moment and magnetic anisotropy of linear and zigzag 4{\it d} and 5{\it d} transition metal nanowires: First-principles calculations
- Impact of substrate temperature on magnetic properties of plasma-assisted molecular beam epitaxy grown (Ga,Mn)N
- Electronic structure and Jahn-Teller effect in GaN:Mn and ZnS:Cr
- In situ compensation method for high-precision and high-sensitivity integral magnetometry
- Theory of ferromagnetism driven by superexchange in dilute magnetic semiconductors
- Raman scattering studies of the lateral Mn distribution in MBE-grown Ga1-xMnxN epilayers
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- Spin orbital reorientation transitions induced by magnetic field
- Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
- Ferromagnetic Resonance in a Magnetically Dilute Percolating Ferromagnet: An Experimental and Theoretical Study
- Pair anisotropy in disordered magnetic systems