activity
20052021
most citedGaMnN epitaxial films with high magnetization

51 citations · 286 across the 14 of their papers we have counts for

collaborators

14 papers

cond-mat.mtrl-sci2021★ 18 cited

Improved-Sensitivity Integral SQUID Magnetometry of (Ga,Mn)N Thin Films in Proximity to Mg-doped GaN

Katarzyna Gas, Gerd Kunert, Piotr Dluzewski +3

Nominally 45 nm GaN:Mg/ 5 nm (Ga,Mn)N / 45 nm GaN:Mg trilayers structures prepared by molecular beam epitaxy on GaN-buffered Al2O3 substrates are investigated to verify whether the…

cond-mat.mtrl-sci2020★ 8 cited

Crystal field model simulations of magnetic response of pairs, triplets and quartets of Mn ions in GaN

D. Sztenkiel, K. Gas, J. Z. Domagala +2

A ferromagnetic coupling between localized Mn spins was predicted in a series of \textit{ab initio} and tight binding calculations and experimentally verified for the dilute magnet…

cond-mat.mtrl-sci2019★ 6 cited

Raman scattering studies of the lateral Mn distribution in MBE-grown Ga1-xMnxN epilayers

Katarzyna Gas, Detlef Hommel, Maciej Sawicki

Recent interest in very thin single phase Ga1-xMnxN dilute magnetic layers increased needs for precise, non-destructive, and relatively fast characterization methods with key issue…

physics.app-ph2019★ 9 cited

Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire

Karolina Kalbarczyk, Krzysztof Dybko, Katarzyna Gas +7

Schottky barrier height and the ideality factor are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroep…

cond-mat.mtrl-sci2018★ 27 cited

Impact of substrate temperature on magnetic properties of plasma-assisted molecular beam epitaxy grown (Ga,Mn)N

Katarzyna Gas, Jaroslaw Z. Domagala, Rafal Jakiela +12

A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth tempe…

cond-mat.mtrl-sci2017★ 30 cited

Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures

L. Janicki, G. Kunert, M. Sawicki +5

The Fermi level position in (Ga,Mn)N has been determined from the period-analysis of GaN-related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of…