Topological spin Hall and spin Nernst effects in a bilayer graphene
arXiv:1104.3036 · doi:10.1088/0953-8984/24/27/275302
Abstract
We consider intrinsic contributions to the spin Hall and spin Nernst effects in a bilayer graphene. The relevant electronic spectrum is obtained from the tight binding Hamiltonian, which also includes the intrinsic spin-orbit interaction. The corresponding spin Hall and spin Nernst conductivities are compared with those obtained from effective Hamiltonians appropriate for states in the vicinity of the Fermi level of a neutral bilayer graphene. Both conductivities are determined within the linear response theory and Green function formalism. The influence of an external voltage between the two atomic sheets is also included. We found transition from the topological spin Hall insulator phase at low voltages to conventional insulator phase at larger voltages.
10 pages, 9 figures
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Cited by in corpus (6)
- Supplemental Material to "A first-principles linear response description of the spin Nernst effect"
- A first-principles linear response description of the spin Nernst effect
- Anomalous thermospin effect in the low-buckled Dirac materials
- Spin Hall effect in AA-stacked bilayer graphene
- Spin effects induced by thermal perturbation in a normal metal/magnetic insulator system
- Resonant excitation of the spin-wave current in hybrid nanostructures