Spin Hall effect in AA-stacked bilayer graphene

Abstract

Intrinsic spin Hall effect in the AA-stacked bilayer graphene is studied theoretically. The low-energy electronic spectrum for states in the vicinity of the Dirac points is obtained from the corresponding $\mathbf{k}\cdot \mathbf{p}$ Hamiltonian. The spin Hall conductivity in the linear response regime is determined within the Green function formalism. Conditions for the existence of spin Hall insulator phase are also analyzed, and it is shown that the spin Hall insulator phase can exist for a sufficiently large spin-orbit coupling, which opens a gap in the spectrum. The electric field perpendicular to the graphene plane leads then to reduction of the gap width and suppression of the spin Hall insulator phase. The low temperature spin Nernst effect is also calculated from the zero temperature spin Hall conductivity.

5 pages, 7 figures

References in corpus (4)

• Spin Hall Effect
• Band topology and quantum spin Hall effect in bilayer graphene
• Bulk-edge correspondence for Chern topological phases: A viewpoint from a generalized index theorem
• Topological phases in gated bilayer graphene: Effects of Rashba spin-orbit coupling and exchange field

Cited by in corpus (7)

• Electronic properties of graphene-based bilayer systems
• Band gap engineering in AA-stacked bilayer graphene
• Electronic Instabilities of the AA-Honeycomb Bilayer
• Piezoelectricity in asymmetrically strained bilayer graphene
• Excitonic condensation and metal-semiconductor transition in AA bilayer graphene in the external magnetic field
• Tunable plasmon modes in doped AA-stacked bilayer graphene
• Substrate effects on transport properties of a biased AA-stacked bilayer graphene