Bias Free Gap Creation in Bilayer Graphene

Abstract

For graphene to be utilized in the digital electronics industry the challenge is to create bandgaps of order 1eV as simply as possible. The most successful methods for the creation of gaps in graphene are (a) confining the electrons in nanoribbons, which is technically difficult or (b) placing a potential difference across bilayer graphene, which is limited to gaps of around 300meV for reasonably sized electric fields. Here we propose that electronic band gaps can be created without applying an external electric field, by using the electron-phonon interaction formed when bilayer graphene is sandwiched between highly polarisable ionic materials. We derive and solve self-consistent equations, finding that a large gap can be formed for intermediate electron-phonon coupling. The gap originates from the amplification of an intrinsic Coulomb interaction due to the proximity of carbon atoms in neighbouring planes.

References in corpus (13)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• Energy Band Gap Engineering of Graphene Nanoribbons
• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
• Quantum dots in graphene
• Coulomb blockade in graphene nanoribbons
• Electronic properties of bilayer and multilayer graphene
• Determination of the electronic structure of bilayer graphene from infrared spectroscopy results
• Electron spectrum of epitaxial graphene monolayers
• High-temperature behaviour of supported graphene: electron-phonon coupling and substrate-induced doping
• Hopping-resolved electron-phonon coupling in bilayer graphene