activity
20092020
most citedCorrelating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

199 citations · 332 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2020★ 27 cited

Growth kinetics and atomistic mechanisms of native oxidation of ZrSSe and MoS crystals

Seong Soon Jo, Akshay Singh, Liqiu Yang +14

A thorough understanding of native oxides is essential for designing semiconductor devices. Here we report a study of the rate and mechanisms of spontaneous oxidation of bulk singl…

cond-mat.mtrl-sci2013★ 73 cited

Prospects of Direct Growth Boron Nitride Films as Substrates for Graphene Electronics

Michael S. Bresnehan, Matthew J. Hollander, Maxwell Wetherington +8

We present a route for direct growth of boron nitride via a polyborazylene to h-BN conversion process. This two-step growth process ultimately leads to a >25x reduction in the RMS…

cond-mat.mtrl-sci2009

Nucleation of Graphene on SiC(0001)

Joshua Robinson, Kathleen Trumbull, Randall Cavalero +7

This paper has been withdrawn due to the adherance to the double submission policies of a refereed journal. Our apologies.

cond-mat.mtrl-sci2009★ 33 cited

Epitaxial Graphene Growth on SiC Wafers

D. Kurt Gaskill, Glenn G. Jernigan, Paul M. Campbell +17

An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Corr…

cond-mat.mtrl-sci2009★ 199 cited

Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

Joshua A. Robinson, Maxwell Wetherington, Joseph L. Tedesco +11

We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the…