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cond-mat2003
Electrostatic Engineering of Nanotube Transistors for Improved Performance
S. Heinze, J. Tersoff, Ph. Avouris
With decreasing device dimensions, the performance of carbon nanotube field-effect transistors (CNFETs) is limited by high Off currents except at low drain voltages. We show that a…
cond-mat2003
Prepyramid-to-pyramid transition of SiGe islands on Si(001)
A. Rastelli, H. von Kaenel, B. J. Spencer +1
The morphology of the first three-dimensional islands appearing during strained growth of SiGe alloys on Si(001) was investigated by scanning tunneling microscopy. High resolution…