Gate-tunable cross-plane heat dissipation in single-layer transition metal dichalcogenides

Zhun-Yong Ong; Gang Zhang; Linyou Cao; Yong-Wei Zhang

doi:10.1103/PhysRevResearch.2.033470

paper

Gate-tunable cross-plane heat dissipation in single-layer transition metal dichalcogenides

arXiv:2009.12006 · doi:10.1103/PhysRevResearch.2.033470

Abstract

Efficient heat dissipation to the substrate is crucial for optimal device performance in nanoelectronics. We develop a theory of electronic thermal boundary conductance (TBC) mediated by remote phonon scattering for the single-layer transition metal dichalcogenide (TMD) semiconductors MoS $_{2}$ and WS $_{2}$ , and model their electronic TBC with different dielectric substrates (SiO $_{2}$ , HfO $_{2}$ and Al $_{2}$ O $_{3}$ ). Our results indicate that the electronic TBC is strongly dependent on the electron density, suggesting that it can be modulated by the gate electrode in field-effect transistors, and this effect is most pronounced with Al $_{2}$ O $_{3}$ . Our work paves the way for the design of novel thermal devices with gate-tunable cross-plane heat-dissipative properties.

arXiv comment9 pages, 4 figures

References in corpus (14)

Cited by in corpus (1)

Theoretical analysis of thermal boundary conductance of MoS2-SiO2 and WS2-SiO2 interface