Gate-tunable cross-plane heat dissipation in single-layer transition metal dichalcogenides

Abstract

Efficient heat dissipation to the substrate is crucial for optimal device performance in nanoelectronics. We develop a theory of electronic thermal boundary conductance (TBC) mediated by remote phonon scattering for the single-layer transition metal dichalcogenide (TMD) semiconductors MoS${}_2$ and WS${}_2$, and model their electronic TBC with different dielectric substrates (SiO${}_2$, HfO${}_2$ and Al${}_2$O${}_3$). Our results indicate that the electronic TBC is strongly dependent on the electron density, suggesting that it can be modulated by the gate electrode in field-effect transistors, and this effect is most pronounced with Al${}_2$O${}_3$. Our work paves the way for the design of novel thermal devices with gate-tunable cross-plane heat-dissipative properties.

9 pages, 4 figures

References in corpus (4)

• Energy Dissipation and Transport in Nanoscale Devices
• Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering
• Intrinsic Transport Properties of Electrons and Holes in Monolayer Transition Metal Dichalcogenides
• Theory of substrate-directed heat dissipation for single-layer graphene and other two-dimensional crystals

Cited by in corpus (1)

• Theoretical analysis of thermal boundary conductance of MoS2-SiO2 and WS2-SiO2 interface