Charged Impurity Scattering in Graphene Nanostructures

Abstract

We study charged impurity scattering and static screening in a top-gated substrate-supported graphene nanostructure. Our model describes how boundary conditions can be incorporated into scattering, sheds light on the dielectric response of these nanostructures, provides insights into the effect of the top gate on impurity scattering, and predicts that the carrier mobility in such graphene heterostructures decreases with increasing top dielectric thickness and higher carrier density. An increase of up to almost 60 percent in carrier mobility in ultrathin top-gated graphene is predicted.

4 pages, 3 figures

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Cited by in corpus (13)

• Analyzing the Carrier Mobility in Transition-metal Dichalcogenide MoS2 Field-effect Transistors
• Mobility enhancement and temperature dependence in top-gated single-layer MoS2
• Theory of Interfacial Plasmon-Phonon Scattering in Supported Graphene
• All-carbon vertical van der Waals heterostructures: Non-destructive functionalization of graphene for electronic applications
• Theory of substrate-directed heat dissipation for single-layer graphene and other two-dimensional crystals
• Anisotropic charged impurity-limited carrier mobility in monolayer phosphorene
• Theoretical analysis of high-field transport in graphene on a substrate
• Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor
• Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?
• Effects of the structure of charged impurities and dielectric environment on conductivity of graphene
• Theoretical analysis of thermal boundary conductance of MoS2-SiO2 and WS2-SiO2 interface
• Gate-tunable cross-plane heat dissipation in single-layer transition metal dichalcogenides
• Potential fluctuations in graphene due to correlated charged impurities in substrate