Temperature dependence of the conductivity of graphene on boron nitride

Abstract

The substrate material of monolayer graphene influences the charge carrier mobility by various mechanisms. At room temperature, the scattering of conduction electrons by phonon modes localized at the substrate surface can severely limit the charge carrier mobility. We here show that for substrates made of the piezoelectric hexagonal boron nitride (hBN), in comparison to the widely used SiO${}_2$, this mechanism of remote phonon scattering is --at room temperature-- weaker by almost an order of magnitude, and causes a resistivity of approximately 3\,$\Omega$. This makes hBN an excellent candidate material for future graphene based electronic devices operating at room temperature.

6 pages, 4 figures, to appear in Phys. Rev. B

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• Development of high frequency and wide bandwidth Johnson noise thermometry
• Dissipation-enabled hydrodynamic conductivity in a tunable bandgap semiconductor
• Dielectric function and plasmons in graphene: A self-consistent-field calculation within a Markovian master equation formalism
• Thermo Activated Hysteresis on High Quality Graphene/h-BN Devices
• Coulomb drag in graphene - boron nitride heterostructures: the effect of virtual phonon exchange
• Inelastic carrier lifetime in a coupled graphene electron-phonon system: Role of plasmon-phonon coupling
• Many-body effects in doped graphene on a piezoelectric substrate
• Non-linear photoconductivity of strongly driven graphene
• Substrate-dependent electrical transport in individual single-walled carbon nanotubes grown across SiO${}_2$ and hexagonal boron nitride